smd type transistors 1 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 marking marking 2a www.kexin.com.cn features epitaxial planar die construction absolute maximum ratings ta = 25 parameter symbol rating unit collector- base voltage v cbo -40 v collector - emitter voltage v ceo -40 v emitter - base voltage v ebo -5 v collector current- continuous i c -0.2 a collector dissipation p c 0.3 w junction and storage temperature t j ,t stg -55to150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector - base breakdown voltage v cbo ic= -100 a i e =0 -40 v collector - emitter breakdown voltage v ceo ic= -1 ma i b =0 -40 v emitter- base breakdown voltage v ebo i e = -100 a i c =0 -5 v collector cut-off current ic bo v cb =-40v,i e =0 -0.1 a collector cut-off current ic eo v ce =-40v,v be(off) =-3v -50 na emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a v ce =-1v,i c = -10ma 100 300 v ce =-1v,i c = -50ma 60 collector- emitter saturation voltage v ce(sat) i c =-50 ma, i b = -5ma -0.3 v base - emitter saturation voltage v be(sat) i c =-50 ma, i b = -5ma -0.95 v delay time t d v cc =-3.0v,v be =0.5v 35 rise time t r i c =-10ma,i b1 =-1.0ma 35 storage time t s v cc =-3.0v,i c =-10ma 225 fall time t f i b1 =i b2 =-1.0ma 75 transition frequency f t v ce = -20v, i c = -10ma, f=100mhz 250 mhz dc current gain ns ns h fe pnp transistors KMBT3906 (mmbt3906)
smd type transistors 3 www.kexin.com.cn typical characteristics fig.1 max power dissipation vs ambient temperature fig.2 input and output capacitance vs. collector-base voltage fig.3 typical dc current gain vs collector current fig.4 typical collector-emitter saturation voltage vs. collector current fig.5 typical base-emitter saturation voltage vs. collector current KMBT3906 (mmbt3906)
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